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gaas , phemt , mmic , high gain power amplifier, 2 ghz to 50 ghz data sheet hmc1127 rev. b document feedback information furnished by analog devices is believed to be accurate and reliable. howeve r, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or othe rwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 2015 C 2018 analog devices, inc. all rights reserved. technical support www.analog.com features output power for 1 db compression (p1db) : 12.5 dbm typical at 8 gh z to 30 gh z saturated o utp ut power ( p sat ) : 17.5 dbm typical at 8 gh z to 30 gh z gain: 14.5 db typical at 30 gh z to 50 gh z o utput third - order intercep t (ip3) : 23 dbm typical at 8 gh z to 30 gh z supply v oltage: 5 v at 80 ma 50 ? m atched i nput/ o utput die s ize : 2.7 mm 1.45 mm 0.1 mm applications test i nstrumentation microwave r adio s and vsat s military and s pace telecom munications i nfrastructure fiber o ptics functional block dia gram 13085-001 hmc1127 rfin rfout v dd v gg 1 v gg 2 1 2 5 4 3 figure 1. general description the hmc11 27 is a gallium arsenide (gaas), pseudomorphic high electron mobility transfer (p hemt), monolithic microwave integrated circuit (mmic), d istrib uted p ower a mplifier that operates between 2 ghz and 50 ghz. the hmc1127 provides 14.5 db of gain, 23 dbm output ip3 and 12.5 dbm of output power at 1 db gain compression while requiring 80 ma from a 5 v supply. the hmc1127 amplifier inputs/outputs are internally matched to 50 ? facilitating integra tion into m ulti c hip m odules (mcms). all data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
hmc1127 data sheet rev. b | page 2 of 16 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 functional block diagram .............................................................. 1 gene ral description ......................................................................... 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 2 ghz to 8 ghz frequency range ............................................. 3 8 ghz to 30 ghz frequency range ........................................... 3 30 ghz to 40 ghz frequency range ......................................... 4 40 ghz to 50 ghz frequency range ......................................... 4 absolute maximum ratings ............................................................ 5 esd caution ...................................................................................5 pin configuration and function descriptions ..............................6 interface schema tics .....................................................................7 typical performance characteristics ..............................................8 applications information .............................................................. 13 mounting and bonding techniques for millimeterwave gaas mmics ......................................................................................... 13 application circuit ......................................................................... 15 assembly diagram ..................................................................... 15 outline dimensions ....................................................................... 16 ordering guide .......................................................................... 16 revision history 1 /201 8 rev. a to rev. b changes to figure 1 .......................................................................... 1 changes to figure 4 .......................................................................... 7 changes to ordering guide .......................................................... 16 5 / 20 15 rev. 00.1214 to rev. a this hittite microwave products data sheet has been reformatted to meet the styles and standards of analog devices, inc. updated format .................................................................. universal changes to table 5 ............................................................................ 5 added applications information section and figure 35; renumbered sequentially .............................................................. 13 added ordering guide section .................................................... 1 6
data sheet hmc1127 rev. b | page 3 of 16 specifications 2 gh z to 8 gh z frequency range t a = +25c, v dd = +5 v, v gg2 = +1.4 v, i dd = 80 ma . adjust v gg 1 between ?2 v and 0 v to achieve i dd = 80 ma typical. table 1 . parameter symbol test conditions/comments min typ max unit frequency range 2 8 gh z gain 12 15 db gain variation over temperature 0 .005 db/c return loss input 17 db output 10 db output power output power for 1 db compression p1db 11 14 dbm saturated output power p sat 18.5 dbm output third - order intercept ip3 measurement taken at p out /ton e = 10 dbm 25.5 dbm noise figure 8 dbm supply current i dd v dd = 4 v, v dd = 5 v, v dd = 6 v, v dd = 7 v, or v dd = 8 v 80 ma 8 gh z to 30 gh z frequency range t a = +25c, v dd = +5 v, v gg2 = +1.4 v, i dd = 80 ma. adjust v gg 1 between ?2 v and 0 v to achieve i dd = 80 ma typical. table 2 . parameter symbol test conditions/comments min typ max unit fre quency range 8 30 gh z gain 10.5 13.5 db gain variation over temperature 0 .006 db/c return loss input 18 db output 20 db output power 1 db compression (p1db) p1db 9.5 12.5 dbm saturated output power (p sat ) p sat 17.5 dbm output third - order intercept ip3 measurement taken at p out /tone = 10 dbm 23 dbm noise figure 6.5 dbm supply current i dd v dd = 4 v, v dd = 5 v, v dd = 6 v, v dd = 7 v, or v dd = 8 v 80 ma
hmc1127 data sheet rev. b | page 4 of 16 30 gh z to 40 gh z frequency range t a = +25c, v dd = +5 v, v gg2 = +1.4 v, i dd = 80 ma. adjust v gg 1 between ?2 v and 0 v to achieve i dd = 80 ma typical. table 3 . parameter symbol test conditions/comments min typ max unit frequency range 30 40 gh z gain 11.5 14.5 db gain variation over temperature 0 .011 db/c return loss input 20 db output 17 db output power 1 db compression (p1db) p1db 9 12 dbm saturated output power (p sat ) p sat 17 dbm output third - order intercept ip3 measurement taken at p out /tone = 10 dbm 22 dbm noise figure 6 dbm supp current i dd v dd = 4 v, v dd = 5 v, v dd = 6 v, v dd = 7 v, or v dd = 8 v 80 ma 40 gh z to 50 gh z frequency range t a = +25c, v dd = +5 v, v gg2 = +1.4 v, i dd = 80 ma. adjust v gg 1 between ?2 v and 0 v to achieve i dd = 80 ma typical. table 4 . parameter symbol test conditions/comments min typ max unit frequency range 40 5 0 gh z gain 11.5 14.5 db gain variation over temperature 0 .01 2 db/c return loss input 13 db output 1 3 db output power 1 db compression (p1db) p1db 8.5 1 0.5 dbm saturated output power (p sat ) p sat 1 5 dbm output third - order intercept ip3 measurement taken at p out /tone = 10 dbm 18 dbm noise figure 6 .5 dbm supp current i dd v dd = 4 v, v dd = 5 v, v dd = 6 v, v dd = 7 v, or v dd = 8 v 80 ma
data sheet hmc1127 rev. b | page 5 of 16 abs olute maximum ratings table 5 . parameter rating drain bias voltage ( v dd ) 8 .5 v gate bias voltage v gg 1 ?3 v dc to 0 v dc v gg 2 for v dd = 8 v 1 3.6 v for v dd = 7 v 3.0 v for v dd = 6 v >2.0 v for v dd = 4 v to 5 v >1.2 v rf input power (rfin) 22 dbm channel temperature 175c continuous power dissipation, p diss ( t a = 85c , derate 26.1 m w /c above 85c) 2.5 3 w thermal resistance , r th ( channel to die bottom ) 3 8.3 c/w 2 storage temperature range ?65 c to + 150c operating temperature range ?55 c to +85 c esd sensitivity , h uman b ody m odel (hbm) class1a, passed 250 v stresses at or above those listed under absolute maximum ratings may cause permanent damage to the product. this is a stress rating only; func tional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. operation beyond the maximum operating conditions for extended periods may affect product reliability. esd caution 1 i dd < 125 ma. 2 based on a thermal epoxy of 20 w/ c .
hmc1127 data sheet rev. b | page 6 of 16 pin configuration and fu nction descriptions 13085-106 hmc1127 top view (not to scale) rfin rfout v dd v gg 1 v gg 2 1 2 5 4 3 figure 2 . pad configuration table 6 . pad function descriptions pad o. neonic description 1 rfin rf input. this pin is ac - coupled and matched to 50 ? . 2 v dd power supply voltage for the amplifier , with inte grated rf choke . connect dc bias to this pad to provide drain current (i dd ) . 3 rfout rf output. this pin is ac - coupled and matched to 50 ?. 4 v gg 2 gate control 2 for amplifier . attach bypass capacitors as shown in figure 38 . for nominal operation , app ly 1.4 v to v gg2 . 5 v gg 1 gate control 1 for amplifier . attach bypass capacitors as shown in figure 38 . adjust this pad to achieve i dd = 80 ma. die b ottom gnd die bottom must be connected to rf/ dc ground .
data sheet hmc1127 rev. b | page 7 of 16 interface schematic s rfin 13085-100 figure 3. rfin interface schematic v dd 13085-101 4 rfout 13085-102 5 v gg 2 13085-103 6 2 v gg 1 13085-104 7 1 gnd 13085-105 8
hmc1127 data sheet rev. b | page 8 of 16 typical performance characteristics 20 C40 C30 C20 C10 0 10 0 5 10 15 20 25 30 35 40 45 50 55 response (db) frequency (ghz) s21 s11 s22 13085-002 figure 9. response ( gain and return loss ) vs. frequency 0 C10 C20 C30 C40 0 5 10 15 20 25 30 35 40 45 50 return loss (db) frequency (ghz) +25c +85c C55c 13085-003 10 0 C10 C20 C30 C40 0 5 10 15 20 25 30 35 40 45 50 gain (db) frequency (ghz) 4v 5v 6v 7v 8v 13085-004 11 4 2 14 5 2 14 6 2 2 7 2 3 8 2 36 20 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 gain (db) frequency (ghz) +25c +85c C55c 13085-005 12 0 C10 C20 C30 C40 0 5 10 15 20 25 30 35 40 45 50 return loss (db) frequency (ghz) +25c +85c C55c 13085-006 13 20 16 12 8 4 18 14 10 6 0 5 10 15 20 25 30 35 40 45 50 gain (db) frequency (ghz) 80ma 95ma 105ma 125ma 13085-007 14 5 2 14
data sheet hmc1127 rev. b | page 9 of 16 21 3 5 7 9 11 13 15 17 19 2 46 42 38 34 30 26 22 18 14 10 6 50 p1db (dbm) frequency (ghz) +25c +85c C55c 13085-008 figure 15 . p1db vs. frequency at various temperature s 23 5 7 9 11 13 15 17 19 21 2 46 42 38 34 30 26 22 18 14 10 6 50 p sat (dbm) frequency (ghz) +25c +85c C55c 13085-009 16 21 3 5 7 9 11 13 15 17 19 2 46 42 38 34 30 26 22 18 14 10 6 50 p1db (dbm) frequency (ghz) 80ma 95ma 105ma 125ma 13085-010 17 1 5 2 14 21 3 5 7 9 11 13 15 17 19 2 46 42 38 34 30 26 22 18 14 10 6 50 p1db (dbm) frequency (ghz) 4v 5v 6v 7v 8v 13085-0 1 1 18 1 4 2 14 5 2 14 6 2 2 7 2 3 8 2 36 23 5 7 9 11 13 15 17 19 21 2 46 42 38 34 30 26 22 18 14 10 6 50 p sat (dbm) frequency (ghz) 4v 5v 6v 7v 8v 13085-012 19 4 2 14 5 2 14 6 2 2 7 2 3 8 2 36 23 5 7 9 11 13 15 17 19 21 2 46 42 38 34 30 26 22 18 14 10 6 50 p sat (dbm) frequency (ghz) 80ma 95ma 105ma 125ma 13085-013 20 5 2 14
hmc1127 data sheet rev. b | page 10 of 16 30 10 12 16 14 18 20 22 24 26 28 246 42 38 34 30 26 22 18 14 10 650 ip3 (dbm) frequency (ghz) +25c +85c ?55c 13085-014 figure 21. output ip3 vs. frequency at various temperatures, p out = 0 dbm/tone 30 10 12 16 14 18 20 22 24 26 28 246 42 38 34 30 26 22 18 14 10 650 ip3 (dbm) frequency (ghz) 80ma 95ma 105ma 13085-015 figure 22. output ip3 vs. frequency for various supply currents, p out = 0 dbm/tone (v dd = 5 v, v gg 2 = 1.4 v) 70 0 10 20 30 40 50 60 ?5 10 7 4 1 ?2 im3 (dbc) p out /tone (dbm) 2ghz 10ghz 20ghz 30ghz 40ghz 50ghz 13085-016 figure 23. output third-orde r intermodulation (im3) vs. p out /tone at v dd = 5 v, v gg 2 = 1.4 v 30 10 12 16 14 18 20 22 24 26 28 246 42 38 34 30 26 22 18 14 10 650 ip3 (dbm) frequency (ghz) 4v 5v 6v 7v 8v 13085-017 figure 24. output ip3 vs. frequency for various supply voltages, p out = 0 dbm/tone (for v dd = 4 v, v gg 2 = 1.4 v; for v dd = 5 v, v gg 2 = 1.4 v; for v dd = 6 v, v gg 2 = 2 v; for v dd = 7 v, v gg 2 = 3 v; for v dd =8 v, v gg 2 = 3.6 v) 70 0 10 20 30 40 50 60 ?5 10 7 4 1 ?2 im3 (dbc) p out /tone (dbm) 2ghz 10ghz 20ghz 30ghz 40ghz 50ghz 13085-018 figure 25. output third-order intermodulation (im3) vs. p out /tone at v dd = 4 v, v gg 2 = 1.4 v 70 0 10 20 30 40 50 60 ?5 10 7 4 1 ?2 im3 (dbc) p out /tone (dbm) 2ghz 10ghz 20ghz 30ghz 40ghz 50ghz 13085-019 figure 26. output third-orde r intermodulation (im3) vs. p out /tone at v dd = 6 v, v gg 2 = 2 v
data sheet hmc1127 rev. b | page 11 of 16 70 0 10 20 30 40 50 60 C5 10 7 4 1 C2 im3 (dbc) p out /tone (dbm) 2ghz 10ghz 20ghz 30ghz 40ghz 50ghz 13085-020 f igure 27. output third - order intermodulation (im3) vs. p out /tone at v dd = 7 v , v gg 2 = 3 v 12 11 10 9 8 7 6 5 4 3 2 6 10 14 18 22 26 30 34 38 42 46 50 noise figure (db) frequency (ghz) +25c +85c C55c 13085-021 28 12 11 10 9 8 7 6 5 4 3 2 6 10 14 18 22 26 30 34 38 42 46 50 noise figure (db) frequency (ghz) 80ma 90ma 100ma 110ma 13085-022 29 5 2 14 70 0 10 20 30 40 50 60 C5 10 7 4 1 C2 im3 (dbc) p out /tone (dbm) 2ghz 10ghz 20ghz 30ghz 40ghz 50ghz 13085-023 30 - 3 8 2 36 12 11 10 9 8 7 6 5 4 3 2 6 10 14 18 22 26 30 34 38 42 46 50 noise figure (db) frequency (ghz) 4v 5v 6v 7v 8v 13085-024 31 4 2 14 5 2 14 6 2 2 7 2 3 8 2 36 0 C10 C20 C30 C40 C50 C60 C70 C80 C90 0 50 45 40 35 30 25 20 15 10 5 isolation (db) frequency (ghz) +25c +85c C55c 13085-025 32
hmc1127 data sheet rev. b | page 12 of 16 18 16 14 12 10 8 6 4 2 0 124 118 112 106 100 94 88 82 76 70 C9 9 7 5 3 1 C1 C3 C5 C7 p out (dbm), gain (db), pae (%) i dd (ma) input power (dbm) p out gain pae i dd 13085-026 figure 33 . power compression at 24 ghz 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 C9 9 7 5 3 1 C1 C3 C5 C7 power dissipation (w) input power (dbm) 2ghz 10ghz 20ghz 30ghz 40ghz 50ghz 13085-027 34 85
data sheet hmc1127 rev. b | page 13 of 16 applications information the hmc1127 is a gaas, phemt, mmic, cascode distributed power amplifier. the cascode distributed amplifier uses a fundamental cell of two field effect transistors (fets) in series, source to drain. this fundamental cell then duplicates a number of times. the major benefit of this is an increase in the operation bandwidth. the basic schematic for a fundamental cell is given in figure 35. 13085-107 rfout v gg 2 v gg 1 rfin v dd figure 35. fundamental cell schematic the recommended bias sequence during power up is the following: 1. connect gnd. 2. set v gg 1 to ?2 v. 3. set v dd to 5 v. 4. set v gg 2 to 1.4 v. 5. increase v gg 1 to achieve a typical quiescent current (i dq ) = 80 ma. 6. apply the rf signal. the recommended bias sequence during power down is the following: 1. tur n of f t he rf sig na l. 2. decrease v gg 1 to ?2 v to achieve i dq = 0 ma. 3. decrease v gg 2 to 0 v. 4. decrease v dd to 0 v. increase v gg 1 to 0 v. mounting and bonding techniques for millimeterwave gaas mmics attach the die directly to the ground plane eutectically or with conductive epoxy (see the handling precautions section, the mounting section, and the wire bonding section). microstrip, 50 , transmission lines on 0.127 mm (5 mil) thick alumina, thin film substrates are recommended for bringing the radio frequency to and from the chip (see figure 36). when using 0.254 mm (10 mil) thick alumina, thin film substrates, raise the die 0.150 mm (6 mils) to ensure that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick, molybdenum (mo) heat spreader (moly tab) which can then be attached to the ground plane (see figure 36 and figure 37). rf ground plane 0.102mm (0.004") thick gaas mmic wire bond 0.127mm (0.005") thick alumina thin film substrate 0.076mm (0.003") 13083-037 figure 36. die without moly tab 0.102mm (0.004") thick gaas mmic wire bond rf ground plane 0.254mm (0.010") thick alumina thin film substrate 0.076mm (0.003") 0.150mm (0.005") thick moly tab 13083-038 figure 37. die with moly tab place microstrip substrates as close to the die as possible to minimize bond wire length. typical die to substrate spacing is 0.076 mm to 0.152 mm (3 mil to 6 mil). handling precautions to avoid permanent damage, follow these storage, cleanliness, static sensitivity, transient, and general handling precautions: ? place all bare die in either waffle or gel-based esd protective containers and then seal the die in an esd protective bag for shipment. once the sealed esd protective bag is opened, store all die in a dry nitrogen environment. ? handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. ? follow esd precautions to protect against esd strikes. ? while bias is applied, suppress instrument and bias supply transients. use shielded signal and bias cables to minimize inductive pick up. ? handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and must not be touched with vacuum collet, tweezers, or fingers.
hmc1127 data sheet rev. b | page 14 of 16 mounting the chip is back metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. ensure that the mounting surface is clean and flat. when eutectic die attached, a 80/20 gold tin preform is recommended with a work surface temperature of 255c and a tool temperature of 265c. when hot 90/10 nitrogen/hydrogen gas is applied, ensure that tool tip temperature is 290c. do not expose the chip to a temperature greater than 320c for more than 2 0 seconds. for attachment, no more than 3 seconds of scrubbing is required. when epoxy die attached, apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into pos ition. cure epoxy per the schedule of the manufacturer. wire bonding rf bonds made with two 1 mil wires are recommended. ensure that these bonds are thermosonically bonded with a force of 40 grams to 60 grams. dc bonds of an 0.001 in. (0.025 mm) diameter, thermosonically bonded, are recommended. make ball bonds with a force of 40 grams to 50 grams and wedge bond s with a force of 18 grams to 22 grams. make all bonds with a nominal stage temperature of 150c. apply a minimum amount of ultrasonic energy to ach ieve reliable bonds. make all bonds as short as possible, less than 12 mils (0.31 mm).
data sheet hmc1127 rev. b | page 15 of 16 application circuit 0.1f 100pf 0.1f 100pf 0.1f 100pf v dd rfin rfout v gg 2 v gg 1 2 3 4 5 1 13085-029 figure 38. typical applications circuit assembly diagram 50 ? transmission line to v gg 1 supply to v gg 2 supply 0.1f 0.1f 100pf 100pf all bond wires are 1mil diameter 3mil nominal gap to v dd supply 100pf 0.1f 13085-028 figure 39. assembly diagram
hmc1127 data sheet rev. b | page 16 of 16 outline dimensions 1.450 0.804 0.709 0.077 0.042 0.150 0.150 0.150 0.200 0.095 0.320 0.410 0.200 0.200 0.200 0.150 0.150 0.150 0.200 2.700 1.083 03-19-2015- a 2 5 1 4 3 0.100 0.100 0.100 side view top view (circuit side) figure 40 . 5- pad bare die [chip] (c - 5- 3) dimensions shown in millimeters ordering guide model temperature range package description package option hmc1127 ?55 c to +85 c 5 - pad bare die [chip] c -5 -3 hmc1127 -sx ?55 c to +85 c 5 - pad bare die [chip] c -5 -3 ? 2015 C 2018 analog devices, inc. all rights reserved. trademarks and registered trademarks are the property of their respective owners. d13085 - 0- 1/18(b)

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